Design and Analysis of Tunnel Field Effect Transistor for Low Power Application

Abstract

Tunnel Field Effect Transistor is a semiconductor device designed for low power consumption which utilizes band to band tunnelling as a carrier injection mechanism. The objective is to integrate a minimal leakage current to enhance the energy efficiency of the Tunnel Field Effect Transistor relative to a MOSFET. An optimized model of Double Gate Tunnel Field Effect Transistor has been developed that can be utilized in low power applications. Increasing emergence of the Internet of Things (IoT) have led to a need for devices that operate at low supply voltage and exhibit low leakage behaviour. The proposed model has lower leakage current, higher Ion-Ioff ratio and steeper Subthreshold Swing than previous research work. It has been shown by varying the channel length, material, source and drain doping concentration. The subthreshold swing found to be 11.91 mV/decade, and obtained Ion/Ioff ratio is 4.60724×109 which ensures that this model is a possible contender for low power application.

Conclusion

In this work, we have developed a simulation-based model of DGTFET. For a TFET, the subthreshold swing and Ion/Ioff ratio both are paramount parameters as they are major concern for low power application. The model was developed after analysing impact of various channel length, channel material, doping profile. GaAs was used as the channel material of the model where channel length was 20 nm, source doping concentration was 22atom/cm3 and drain doping concentration was 18atom/cm3. The subthreshold swing found to be only 11.91 mV/decade, and obtained Ion/Ioff ratio is 4.60724×109. The value of subthreshold swing (SS) and Ion/Ioff ratio was then compared with some recent works of researchers which validates our DGTFET model. The proposed model can be applied to various low power application like Bio-Sensing Application, Energy Harvesting Systems, Environmental Monitoring Nodes, Green Energy Systems, Implantable Medical Devices, IoT Sensors, Portable Environmental Sensors, Ultra Low Power Radio Receivers, Wearable Health Monitors, Wireless Sensor Networks, etc. Our proposed model will provide standard performance in low power systems and high-speed devices in this era of modern technology.

References